Monolithic integration design of GaN-based power chip including gate driver for high-temperature DC-DC converters (2019)
Attributed to:
High permittivity dielectrics on Ge for end of Roadmap application
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.7567/1347-4065/ab1313
Publication URI: http://dx.doi.org/10.7567/1347-4065/ab1313
Type: Journal Article/Review
Parent Publication: Japanese Journal of Applied Physics
Issue: 5