Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices (2019)
Attributed to:
High permittivity dielectrics on Ge for end of Roadmap application
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/icicdt.2019.8790844
Publication URI: http://dx.doi.org/10.1109/icicdt.2019.8790844
Type: Conference/Paper/Proceeding/Abstract