Experimental band alignment of Ta2O5/GaN for MIS-HEMT applications (2017)

First Author: Sawangsri K
Attributed to:  High permittivity dielectrics on Ge for end of Roadmap application funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.mee.2017.04.010

Publication URI: http://dx.doi.org/10.1016/j.mee.2017.04.010

Type: Journal Article/Review

Parent Publication: Microelectronic Engineering