📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

Gaussian distribution of inhomogeneous nickel-vanadium Schottky interface on silicon (100) (2020)

First Author: Soltani S

Attributed to: Underpinning Power Electronics 2012: Hub funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-6641/abc922

Publication URI: http://dx.doi.org/10.1088/1361-6641/abc922

Type: Journal Article/Review

Parent Publication: Semiconductor Science and Technology

Issue: 1