Gaussian distribution of inhomogeneous nickel-vanadium Schottky interface on silicon (100) (2020)
Attributed to:
Underpinning Power Electronics 2012: Hub
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/1361-6641/abc922
Publication URI: http://dx.doi.org/10.1088/1361-6641/abc922
Type: Journal Article/Review
Parent Publication: Semiconductor Science and Technology
Issue: 1