Impact of channel thickness on the performance of an E-mode p-channel MOSHFET in GaN (2018)
Attributed to:
Underpinning Power Electronics 2012: Hub
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.5021306
Publication URI: http://dx.doi.org/10.1063/1.5021306
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 15