Temperature dependent optical gain and absorption of InAs quantum dash laser on silicon emitting at 1.55 µm (2021)
Attributed to:
Compound Semiconductor Underpinning Equipment
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1117/12.2582413
Publication URI: http://dx.doi.org/10.1117/12.2582413
Type: Conference/Paper/Proceeding/Abstract