Thick GaN Capped AlGaN/GaN HEMTs for Reduced Surface Effects (2021)

First Author: Elksne, M.
Attributed to:  Novel GaN Power Devices and Packaging Technologies for 300 degC Ambient Operation funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Publication URI: http://eprints.gla.ac.uk/228485/

Type: Conference/Paper/Proceeding/Abstract