GaN-on-diamond technology platform: Bonding-free membrane manufacturing process (2020)

First Author: Smith M
Attributed to:  Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.5129229

Publication URI: http://dx.doi.org/10.1063/1.5129229

Type: Journal Article/Review

Parent Publication: AIP Advances

Issue: 3