Valence band engineering of GaAsBi for low noise avalanche photodiodes. (2021)
Attributed to:
Plugging the 1 eV band gap gap: GaAsBiN as a highly mismatched alloy for multi-junction photovoltaics.
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1038/s41467-021-24966-0
PubMed Identifier: 34362898
Publication URI: http://europepmc.org/abstract/MED/34362898
Type: Journal Article/Review
Volume: 12
Parent Publication: Nature communications
Issue: 1
ISSN: 2041-1723