Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications (2021)
Attributed to:
Ultra-high voltage (>30KV) power devices through superior materials for HVDC transmission
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/1361-6641/abefa1
Publication URI: http://dx.doi.org/10.1088/1361-6641/abefa1
Type: Journal Article/Review
Parent Publication: Semiconductor Science and Technology
Issue: 5