Development of High-Quality Gate Oxide on 4H-SiC Using Atomic Layer Deposition (2020)
Attributed to:
Ultra-high voltage (>30KV) power devices through superior materials for HVDC transmission
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.4028/www.scientific.net/msf.1004.547
Publication URI: http://dx.doi.org/10.4028/www.scientific.net/msf.1004.547
Type: Journal Article/Review
Parent Publication: Materials Science Forum