Low Excess Noise of Al 0.85 Ga 0.15 As 0.56 Sb 0.44 Avalanche Photodiode From Pure Electron Injection (2021)
Attributed to:
Next generation avalanche photodiodes: realising new potentials using nm wide avalanche regions
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/lpt.2021.3110123
Publication URI: http://dx.doi.org/10.1109/lpt.2021.3110123
Type: Journal Article/Review
Parent Publication: IEEE Photonics Technology Letters
Issue: 20