Stress-strain engineering of single-crystalline silicon membranes by ion implantation: Towards direct-gap group-IV semiconductors (2021)

First Author: Masteghin M

Attributed to: University of Surrey Ion Beam Centre funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1103/physrevmaterials.5.124603

Publication URI: http://dx.doi.org/10.1103/physrevmaterials.5.124603

Type: Journal Article/Review

Parent Publication: Physical Review Materials

Issue: 12