Acceptor-oxygen defects in silicon: The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimer (2021)
Attributed to:
Light and Elevated Temperature Induced Degradation of Silicon Solar Cells
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/5.0076980
Publication URI: http://dx.doi.org/10.1063/5.0076980
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 24