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Acceptor-oxygen defects in silicon: The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimer (2021)

First Author: De Guzman J

Attributed to: Light and Elevated Temperature Induced Degradation of Silicon Solar Cells funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/5.0076980

Publication URI: http://dx.doi.org/10.1063/5.0076980

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 24