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GaAsBi: From Molecular Beam Epitaxy Growth to Devices (2021)

First Author: Richards R

Attributed to: Plugging the 1 eV band gap gap: GaAsBiN as a highly mismatched alloy for multi-junction photovoltaics. funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssb.202100330

Publication URI: http://dx.doi.org/10.1002/pssb.202100330

Type: Journal Article/Review

Parent Publication: physica status solidi (b)

Issue: 2