GaAsBi: From Molecular Beam Epitaxy Growth to Devices (2021)
Attributed to:
Plugging the 1 eV band gap gap: GaAsBiN as a highly mismatched alloy for multi-junction photovoltaics.
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/pssb.202100330
Publication URI: http://dx.doi.org/10.1002/pssb.202100330
Type: Journal Article/Review
Parent Publication: physica status solidi (b)
Issue: 2