Band gap measurements of monolayer h-BN and insights into carbon-related point defects (2021)
Attributed to:
Molecular Beam Epitaxy of Boron Nitride and Graphene layers and heterostructures.
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/2053-1583/ac0d9c
Publication URI: http://dx.doi.org/10.1088/2053-1583/ac0d9c
Type: Journal Article/Review
Parent Publication: 2D Materials
Issue: 4