Hybrid Data-Driven Modeling Methodology for Fast and Accurate Transient Simulation of SiC MOSFETs (2022)

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/tpel.2021.3101713

Publication URI: http://dx.doi.org/10.1109/tpel.2021.3101713

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Power Electronics

Issue: 1