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The Role of Si Self-interstitial Atoms in the Formation of Electrically Active Defects in Reverse-Biased Silicon n + -p Diodes upon Irradiation with Alpha Particles (2021)

First Author: Aharodnikau D

Attributed to: Light and Elevated Temperature Induced Degradation of Silicon Solar Cells funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssa.202100104

Publication URI: http://dx.doi.org/10.1002/pssa.202100104

Type: Journal Article/Review

Parent Publication: physica status solidi (a)

Issue: 23