Dislocations at coalescence boundaries in heteroepitaxial GaN/sapphire studied after the epitaxial layer has completely coalesced. (2021)

First Author: O'Hanlon TJ

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.ultramic.2021.113258

PubMed Identifier: 33812707

Publication URI: http://europepmc.org/abstract/MED/33812707

Type: Journal Article/Review

Volume: 231

Parent Publication: Ultramicroscopy

ISSN: 0304-3991