Investigation of Electrical Properties of InGaN-Based Micro-Light-Emitting Diode Arrays Achieved by Direct Epitaxy (2021)
Attributed to:
Future Compound Semiconductor Manufacturing Hub
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/pssa.202100474
Publication URI: http://dx.doi.org/10.1002/pssa.202100474
Type: Journal Article/Review
Parent Publication: physica status solidi (a)
Issue: 24