Effect of MBE growth conditions on GaAsBi photoluminescence lineshape and localised state filling. (2022)
Attributed to:
Plugging the 1 eV band gap gap: GaAsBiN as a highly mismatched alloy for multi-junction photovoltaics.
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1038/s41598-021-04477-0
PubMed Identifier: 35039503
Publication URI: http://europepmc.org/abstract/MED/35039503
Type: Journal Article/Review
Volume: 12
Parent Publication: Scientific reports
Issue: 1
ISSN: 2045-2322