Investigating stability and tunability of quantum dot transport in silicon MOSFETs via the application of electrical stress (2021)

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-6463/ac3da9

Publication URI: http://dx.doi.org/10.1088/1361-6463/ac3da9

Type: Journal Article/Review

Parent Publication: Journal of Physics D: Applied Physics

Issue: 10