Point Defects in InGaN/GaN Core-Shell Nanorods: Role of the Regrowth Interface (2021)

First Author: Loeto K
Attributed to:  Manufacturing of nano-engineered III-N semiconductors: Equipment Business Case funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/2632-959x/abe990

Publication URI: http://dx.doi.org/10.1088/2632-959x/abe990

Type: Journal Article/Review

Parent Publication: Nano Express

Issue: 1