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Thermal Effects on Initial Volatile Response and Relaxation Dynamics of Resistive RAM Devices (2022)

First Author: Abbey T

Attributed to: Functional Oxide Reconfigurable Technologies (FORTE): A Programme Grant funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/led.2022.3145620

Publication URI: http://dx.doi.org/10.1109/led.2022.3145620

Type: Journal Article/Review

Parent Publication: IEEE Electron Device Letters

Issue: 3