UV-induced change in channel conductivity in AlGaN/GaN high electron mobility transistors to measure doping (2021)

First Author: Wohlfahrt M
Attributed to:  High Performance Buffers for RF GaN Electronics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/5.0049797

Publication URI: http://dx.doi.org/10.1063/5.0049797

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 16