Performance characteristics of low threshold current 1.25 µm type-II GaInAs/GaAsSb 'W'-lasers for optical communications (2021)
Attributed to:
Realising a solid state photomultiplier and infrared detectors through Bismide containing semiconductors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/1361-6463/ac0b72
Publication URI: http://dx.doi.org/10.1088/1361-6463/ac0b72
Type: Journal Article/Review
Parent Publication: Journal of Physics D: Applied Physics
Issue: 36