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High electron mobility and low noise quantum point contacts in an ultra-shallow all-epitaxial metal gate GaAs/Al x Ga1- x As heterostructure (2021)

First Author: Ashlea Alava Y

Attributed to: Nanoelectronic Based Quantum Physics- Technology and Applications. funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/5.0053816

Publication URI: http://dx.doi.org/10.1063/5.0053816

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 6