Influence of Al x Ga 1-x N nucleation layers on MOVPE-grown zincblende GaN epilayers on 3C-SiC/Si(001) (2022)

First Author: Gundimeda A
Attributed to:  Fundamental studies of zincblende nitride structures for optoelectronic applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-6463/ac4c58

Publication URI: http://dx.doi.org/10.1088/1361-6463/ac4c58

Type: Journal Article/Review

Parent Publication: Journal of Physics D: Applied Physics

Issue: 17