Electroforming-Free HfO 2 :CeO 2 Vertically Aligned Nanocomposite Memristors with Anisotropic Dielectric Response (2021)
Attributed to:
ECCS - EPSRC Development of uniform, low power, high density resistive memory by vertical interface and defect design
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1021/acsaelm.1c00791
Publication URI: http://dx.doi.org/10.1021/acsaelm.1c00791
Type: Journal Article/Review
Parent Publication: ACS Applied Electronic Materials
Issue: 12