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Impact of carbon in the buffer on power switching GaN-on-Si and RF GaN-on-SiC HEMTs (2021)

First Author: Uren M

Attributed to: Sub-micron 3-D Electric Field Mapping in GaN Electronic Devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.35848/1347-4065/abdb82

Publication URI: http://dx.doi.org/10.35848/1347-4065/abdb82

Type: Journal Article/Review

Parent Publication: Japanese Journal of Applied Physics

Issue: SB