Paralleling insulated-gate bipolar transistors in the H-bridge structure to reduce current stress. (2021)
Attributed to:
Translational Bioengineering for Neurological Disorders
funded by
MRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1007/s42452-021-04420-y
PubMed Identifier: 33748674
Publication URI: http://europepmc.org/abstract/MED/33748674
Type: Journal Article/Review
Volume: 3
Parent Publication: SN applied sciences
Issue: 4
ISSN: 2523-3963