Tellurium Nanowire Gate-All-Around MOSFETs for Sub-5 nm Applications. (2021)

First Author: Yin Y
Attributed to:  Integration of Novel Materials in Spintronic Devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1021/acsami.0c18767

PubMed Identifier: 33404208

Publication URI: http://europepmc.org/abstract/MED/33404208

Type: Journal Article/Review

Volume: 13

Parent Publication: ACS applied materials & interfaces

Issue: 2

ISSN: 1944-8244