Self-biased magnetoelectric switching at room temperature in three-phase ferroelectric-antiferromagnetic-ferrimagnetic nanocomposites (2021)
Attributed to:
ECCS - EPSRC Development of uniform, low power, high density resistive memory by vertical interface and defect design
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1038/s41928-021-00584-y
Publication URI: http://dx.doi.org/10.1038/s41928-021-00584-y
Type: Journal Article/Review
Parent Publication: Nature Electronics
Issue: 5