Direct transition of a HfGeTe 4 ternary transition-metal chalcogenide monolayer with a zigzag van der Waals gap (2018)

First Author: Saito Y
Attributed to:  Integration of Novel Materials in Spintronic Devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.5023577

Publication URI: http://dx.doi.org/10.1063/1.5023577

Type: Journal Article/Review

Parent Publication: APL Materials

Issue: 4