High performance, electroforming-free, thin film memristors using ionic Na 0.5 Bi 0.5 TiO 3 (2021)
Attributed to:
ECCS - EPSRC Development of uniform, low power, high density resistive memory by vertical interface and defect design
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1039/d1tc00202c
Publication URI: http://dx.doi.org/10.1039/d1tc00202c
Type: Journal Article/Review
Parent Publication: Journal of Materials Chemistry C
Issue: 13