Effect of Si-doped InGaN underlayers on photoluminescence efficiency and recombination dynamics in InGaN/GaN quantum wells (2021)

First Author: Church S

Attributed to: Lighting the Future funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-6463/ac22d3

Publication URI: http://dx.doi.org/10.1088/1361-6463/ac22d3

Type: Journal Article/Review

Parent Publication: Journal of Physics D: Applied Physics

Issue: 47