Defects and Passivation Mechanism of the Suboxide Layers at SiO2/4H-SiC (0001) Interface: A First-Principles Calculation (2021)

First Author: Wang Z
Attributed to:  Integration of Novel Materials in Spintronic Devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2020.3039480

Publication URI: http://dx.doi.org/10.1109/ted.2020.3039480

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 1