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Method for inferring the mechanical strain of GaN-on-Si epitaxial layers using optical profilometry and finite element analysis (2021)

First Author: Spiridon B

Attributed to: Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1364/ome.418728

Publication URI: http://dx.doi.org/10.1364/ome.418728

Type: Journal Article/Review

Parent Publication: Optical Materials Express

Issue: 6