Method for inferring the mechanical strain of GaN-on-Si epitaxial layers using optical profilometry and finite element analysis (2021)
Attributed to:
Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1364/ome.418728
Publication URI: http://dx.doi.org/10.1364/ome.418728
Type: Journal Article/Review
Parent Publication: Optical Materials Express
Issue: 6