High-Throughput Electronic Structures and Ferroelectric Interfaces of HfO 2 by GGA+ U ( d,p ) Calculations (2021)
Attributed to:
Integration of Novel Materials in Spintronic Devices
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/pssr.202100295
Publication URI: http://dx.doi.org/10.1002/pssr.202100295
Type: Journal Article/Review
Parent Publication: physica status solidi (RRL) - Rapid Research Letters
Issue: 10