📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

A Comparative Study of AC Positive Bias Temperature Instability of Germanium nMOSFETs With GeO2/Ge and Si-cap/Ge Gate Stack (2021)

First Author: Gao R

Attributed to: Realistic fault modelling to enable optimization of low power IoT and Cognitive fault-tolerant computing systems funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/jeds.2021.3078540

Publication URI: http://dx.doi.org/10.1109/jeds.2021.3078540

Type: Journal Article/Review

Parent Publication: IEEE Journal of the Electron Devices Society