Vertical field inhomogeneity associated with threading dislocations in GaN high electron mobility transistor epitaxial stacks (2021)

First Author: Wohlfahrt M
Attributed to:  Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/5.0066346

Publication URI: http://dx.doi.org/10.1063/5.0066346

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 24