Stress-strain engineering of single-crystalline silicon membranes by ion implantation: Towards direct-gap group-IV semiconductors (2021)
Attributed to:
Integrated Plasma Source Focused Ion Beam with Scanning Electron Microscope
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1103/physrevmaterials.5.124603
Publication URI: http://dx.doi.org/10.1103/physrevmaterials.5.124603
Type: Journal Article/Review
Parent Publication: Physical Review Materials
Issue: 12