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Non-destructive imaging of residual strains in GaN and their effect on optical and electrical properties using correlative light-electron microscopy (2022)

First Author: Naresh-Kumar G

Attributed to: Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/5.0080024

Publication URI: http://dx.doi.org/10.1063/5.0080024

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 7