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Formation of a ternary oxide barrier layer and its role in switching characteristic of ZnO-based conductive bridge random access memory devices (2022)

First Author: Simanjuntak F

Attributed to: Functional Oxide Reconfigurable Technologies (FORTE): A Programme Grant funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/5.0076903

Publication URI: http://dx.doi.org/10.1063/5.0076903

Type: Journal Article/Review

Parent Publication: APL Materials

Issue: 3