Formation of a ternary oxide barrier layer and its role in switching characteristic of ZnO-based conductive bridge random access memory devices (2022)
Attributed to:
Functional Oxide Reconfigurable Technologies (FORTE): A Programme Grant
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/5.0076903
Publication URI: http://dx.doi.org/10.1063/5.0076903
Type: Journal Article/Review
Parent Publication: APL Materials
Issue: 3