A study of the silicon divacancy defect in the E2V LSST CCD250 using the single trap pumping method (2020)
Abstract
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Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1117/12.2561561
Publication URI: http://dx.doi.org/10.1117/12.2561561
Type: Conference/Paper/Proceeding/Abstract