A study of the silicon divacancy defect in the E2V LSST CCD250 using the single trap pumping method (2020)
Attributed to:
UK Involvement in LSST: Phase B (Oxford component)
funded by
STFC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1117/12.2561561
Publication URI: http://dx.doi.org/10.1117/12.2561561
Type: Conference/Paper/Proceeding/Abstract