On the robustness of ultra-high voltage 4H-SiC IGBTs with an optimized retrograde p-well (2019)

First Author: Tiwari A
Attributed to:  Underpinning Power Electronics switch optimisation Theme funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/demped.2019.8864804

Publication URI: http://dx.doi.org/10.1109/demped.2019.8864804

Type: Conference/Paper/Proceeding/Abstract