Operation of ultra-high voltage (>10kV) SiC IGBTs at elevated temperatures: benefits & constraints (2019)
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ispsd.2019.8757586
Publication URI: http://dx.doi.org/10.1109/ispsd.2019.8757586
Type: Conference/Paper/Proceeding/Abstract